BARITT DIODES FOR K_A-BAND FREQUENCIESFREYER J; FOERG PN.1980; I.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 2; PP. 78-80; BIBL. 14 REF.Article

BASES PHYSIQUES DE LA FIABILITE DES DIODES UHF A BARRIERE DE SCHOTTKY (ARTICLE DE SYNTHESE)RADZIEVSKIJ IA.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 89-93; BIBL. 1 P. 1/2Article

HIGH PEAK PULSE POWER SILICON DOUBLE-DRIFT IMPATT DIODESPFUND G; CURBY R.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 5; PP. 450-451; BIBL. 5 REF.Article

DESIGN AND PERFORMANCES OF MAXIMUM-EFFICIENCY SINGLE-AND DOUBLE-DRIFT-REGION GAAS IMPATT DIODES IN THE 3-18-GHZ FREQUENCY RANGEPRIBETICH J; CHIVE M; CONSTANT E et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 11; PP. 5584-5594; BIBL. 26 REF.Article

CONSIDER A SINGLE DIODE TO STUDY MIXER INTERMOD.CHEADLE DL.1977; MICROWAVES; U.S.A.; DA. 1977; VOL. 16; NO 12; PP. 162-171 (7P.); BIBL. 6 REF.Article

CALCUL D'UN SYSTEME ELECTROMAGNETIQUE D'AMPLIFICATEUR UHF A PLUSIEURS DIODESDAVYDOVA NS; DANYUSHEVSKIJ YU Z.1976; RADIOTEKHNIKA; S.S.S.R.; DA. 1976; VOL. 31; NO 5; PP. 65-74; BIBL. 9 REF.Article

MICROWAVE: TUBES AND SEMICONDUCTORS; OCTOBER 1982 THROUGH AUGUST 19831982; MICROW. D.A.T.A. BOOK; ISSN 0271-0773; USA; DA. 1982; VOL. 27; NO 23; 354 P.Serial Issue

BEAM LEAD IMPATT'S: A NEW DIMENSIONKHANDELWAL DD.1982; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1982; VOL. 25; NO 3; PP. 81-86; 5 P.Article

ETUDE DE FAISABILITE DE DIODES A AVALANCHE A HAUT RENDEMENT AU GAAS FONCTIONNANT EN BANDE MILLIMETRIQUETOURATIER B; BOUCHER A.1979; ; FRA; DA. 1979; DGRST 76 7 0691; 21 P.:ILL.; 30 CM; BIBL. 12 REF.; ACTION CONCERT.: COMPOS. CIRCUITS MICROMINIAT.Report

AUDIOFREQUENCY NOISE IN POINT CONTACT MICROWAVE DIODES.SOLLNER TCLG; HARTLEY CL.1976; J. PHYS. E; G.B.; DA. 1976; VOL. 9; NO 9; PP. 744-745; BIBL. 4 REF.Article

MILLIMETER-WAVE MIXERS FORGE AHEAD WITH GUNN AND BEAM-LEAD DIODES1979; MICROWAVES; USA; DA. 1979; VOL. 18; NO 4; PP. 25-26Article

TRANSFORMATION DES STRUCTURES MESAS PLANES EN MESAS TOTALES POUR APPLICATION AUX DIODES AVALANCHE MILLIMETRIQUES ET AUX DIODES POUR MODULATION RAPIDEBOUVET JV; SIMON J.1978; ; FRA; DA. 1978; DGRST-76 70 698; 2 FASC., 12, 23 P.: ILL.; 30 CM; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

High-power microwave generation from virtual cathode in foilless diode (vircator)NIKOLOV, N. A; KOSTOV, K. G; SPASOVSKY, I. P et al.Electronics Letters. 1988, Vol 24, Num 23, pp 1445-1446, issn 0013-5194Article

INHERENT SIGNAL LOSSES IN RESISTIVE-DIODE MIXERSHINES ME.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 4; PP. 281-292; BIBL. 11 REF.Article

THE AVALANCHE DIODE HIGH-LEVEL MICROWAVE NOISE SOURCEFORREST JR; MEESON JP.1978; J. PHYS. D; GBR; DA. 1978; VOL. 11; NO 13; PP. 1831-1841; H.T. 1; BIBL. 11 REF.Article

RESEAU RESONNANT ET SON APPLICATION A LA CREATION DES DISPOSITIFS SOLIDES MICROONDESLEBEDEV IV; ALYBIN VG.1978; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1978; VOL. 21; NO 10; PP. 24-31; BIBL. 11 REF.Article

A NEW IMPEDANCE-TRANSFORMATION PROPERTY AND ITS APPLICATIONS TO SWITCHING-DIODE Q-FACTOR MEASUREMENTS.MORAWSKI T.1977; INTERNATION. J. CIRCUIT THEORY APPL.; G.B.; DA. 1977; VOL. 5; NO 2; PP. 135-138; BIBL. 8 REF.Article

BROAD-BAND CHARACTERISTICS OF EHF IMPATT DIODESHOLWAY LH JR; SHIOU LUNG CHU.1982; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 11; PP. 1933-1939; BIBL. 12 REF.Article

IMPROVEMENT OF BREAKDOWN CHARACTERISTICS OF A PLANAR MICROWAVE P-I-N DIODE BY THE BEVELLING TECHNIQUEVAYA PR; KAKATI D.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 1; PP. K67-K69; BIBL. 7 REF.Article

THERMAL DESIGN OF MICROWAVE PIN DIODESCHATURVEDI PK; RAMAMURTHI V; KAKATI D et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 2; PP. 129-134; BIBL. 14 REF.Article

APPLICATION OF SI MBE TO MICROWAVE HYPERABRUPT DIODESGOODWIN CA; OTA Y.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 11; PP. 1796-1799; BIBL. 7 REF.Article

CRYOGENIC MILLIMETER-WAVE RECEIVER USING MOLECULAR BEAM EPITAXY DIODESLINKE RA; SCHNEIDER MV; CHO AY et al.1978; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1978; VOL. 26; NO 12; PP. 935-938; BIBL. 11 REF.Article

GENERALIZED SMALL SIGNAL IMPEDANCE FOR MICROWAVE BARITT DIODES.EKNOYAN O.1977; PROC. I.E.E.E.; U.S.A.; DA. 1977; VOL. 65; NO 3; PP. 490-491; BIBL. 5 REF.Article

MICROWAVE BARRIT DIODE WITH RETARDING FIELD. AN INVESTIGATION.EKNOYAN O; SZE SM; YANG ES et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 4; PP. 285-289; BIBL. 25 REF.Article

IMPROVED WAVEGUIDE DIODE MOUNT CIRCUIT MODEL USING POST EQUIVALENCE FACTOR ANALYSISHICKS RG; KHAN PJ.1982; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 11; PP. 1914-1920; BIBL. 19 REF.Article